click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? low ? drift ? | ? v gs1 \ 2 ? / ? t| ? = ? 5v/c ? typ. ? ultra ? low ? leakage ? i g ? = ? 150fa ? typ. ? low ? pinchoff ? v p ? = ? 2v ? typ. ? absolute ? maximum ? ratings ?? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +150c ? operating ? junction ? temperature ? +150c ? maximum ? voltage ? and ? current ? for ? each ? transistor ? ? ? note ? 1 ? \ v gss ? gate ? voltage ? to ? drain ? or ? source ? 40v ? \ v dso ? drain ? to ? source ? voltage ? 40v ? \ i g ( f ) ? gate ? forward ? current ? 10ma ? \ i g ? gate ? reverse ? current ? 10a ? maximum ? power ? dissipation ? device ? dissipation ? @ ? free ? air ? ? ? total ????????????????? 40mw ? @ ? +125c ? matching ? characteristics ? @ ? 25c ? unless ? otherwise ? noted symbol ? characteristics ? value ? units ? conditions ? | ? v gs1 \ 2 ? / ? t| ? max. ? drift ? vs. ? temperature ? 10 ? v/c ? v dg =10v, ? i d =30a ? t a = \ 55c ? to ? +125c ? | ? v ? gs1 \ 2 ? | ? max. ? offset ? voltage ? 5 ? mv ? v dg =10v, ? i d =30a ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv gss ? breakdown ? voltage ? 40 ? 60 ? \\? v ? v ds ? = ? 0 ?????????????????? i d =1na ? bv ggo ? gate \ to \ gate ? breakdown ? 40 ? \\? \\? v ? ?????? i g = ? 1na ??????????????? i d = ? 0 ??????????????? i s = ? 0 ? ? y fss ? transconductance ? full ? conduction ? ? 70 ? ? 300 ? ? 500 ? ? mho ? ? v dg = ? 10v ????????? v gs = ? 0v ?????? f ? = ? 1khz ? y fs ? typical ? operation ? 50 ? 100 ? 200 ? mho ? ????? v dg = ? 10v ????????? i d = ? 30a ?????? f ? = ? 1khz ? |y fs1 \ 2 ? / ? y ? fs | ? mismatch ? \\? 1 ? 5 ? % ?? ? i dss ? drain ? current ? full ? conduction ? ? 60 ? ? 400 ? ? 1000 ? ? a ? ? v dg = ? 10v ?????????????? v gs = ? 0v ? |i dss1 \ 2 ? / ? i dss | ? mismatch ? at ? full ? conduction ? \\? 2 ? 5 ? % ?? ? v gs (off) ? or ? v p ? gate ? voltage ? pinchoff ? voltage ? ? 0.6 ? ? 2 ? ? 4.5 ? ? v ? ? v ds = ? 10v ??????????????? i d = ? 1na ? v gs (on) ? operating ? range ? \\? \\? 4 ? v ? ?????????????? v ds =10v ????????????????? i d =30a ? ? \ i g max. ? gate ? current ? operating ? ? \\? ? \\? ? 1 ? ? pa ? ? v dg = ? 10v ? i d = ? 30a ? \ i g max. ? high ? temperature ? \\? \\? 1 ? na ? t a = ? +125c ? \ i gss max. ? at ? full ? conduction ? \\? \\? 2 ? pa ? v ds ? =0v ?????? v gs = ? 20v ? \ i gss max. ? high ? temperature ? \\? \\? 5 ? na ? t a = ? +125c ?? i ggo ? gate \ to \ gate ? leakage ? \\? 1 ? \\? pa ? v gg = ? 20v ? ? y oss ? output ? conductance ? full ? conduction ? ? \\? ? \\? ? 5 ? ? ? mho ? ? ? v dg = ? 10v ?????????????? v gs = ? 0v ? y os ? operating ? \\? 0.1 ? 0.1 ? v dg = ?? 10v ???????????? i d =30a ? |y os1 \ 2 | ? differential ? \\? 0.01 ? 0.1 ? ? cmr ? common ? mode ? rejection ? \ 20 ? log ? | ? v gs1 \ 2 / ? v ds | ? ? \\? ? 90 ? ? \\? ? db ? ? ? ? v ds ? = ? 10 ? to ? 20v ???????? i d =30a ? cmr ?\ 20 ? log ? | ? v gs1 \ 2 / ? v ds | ? \\? 90 ? \\? ? v ds ? = ? 5 ? to ? 10v ????????? i d =30a ? ? nf ? noise ? figure ? ? \\? ? \\? ? 1 ? ? db ? v ds = ? 10v ?????? v gs = ? 0v ??????? r g = ? 10m ? f= ? 100hz ??????????? nbw= ? 6hz ? e n ? voltage ? \\? 20 ? 70 ? nv/ hz ? v dg =10v ??? i d =30a ??? f=10hz ?? nbw=1hz ? ? c iss ? capacitance ? input ? ? \\? ? \\? ? 3 ? ? ? pf ? ? ? v ds = ? 10v ??????? v gs = ? 0v ??????? f= ? 1mhz ? c rss ? reverse ? transfer ? \\? \\? 1.5 ? c dd ? drain \ to \ drain ? \\? \\? 0.1 ? v dg ? = ? 20v ???? i d =30a ?????? 2n5907 low noise, low drift monolithic dual n- c hannel j fet note 1 ? these ratings are limiting values above which the serviceability of any semiconductor may be impaired to-78 (bottom view) available packages: 2n5907 in to-78 2n5907 available as bare die please contact micross for full package and die dimensions micross components europe tel: +44 1603 788967 email: chipcomponents@micross.com web: http://www.micross.com/distribution 2n5907 benefits: ? tight tracking ? good matching ? ultra low leakage ? low drift the 2n5907 is a high-performance monolithic dual jfet featuring tight matching and low drift over temperature specifications, an d is targeted for use in a wide range of precision inst rumentation applications where tight tracking is required. the hermetically sealed to-78 package is well suited for hi-reliability and harsh environment applications. (see packaging information).
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